di gital transistors (built-in resistors) UMD3N dual digital transistor (npn+pnp) features z dta114e and dtc114e transisto rs are built-in a package. z transistor elements are independen t, eliminating interference. z mounting cost and area can be cut in half. external circuit marking:d3 absolute maximum ratings (ta=25 ) parameter symbol limit unit supply voltage v cc 50 v input voltage v in -10~40 v i o 50 output current i c(max) 100 ma power dissipation p d * 150 mw junction temperature tj 150 storage temperature tstg -55~150 electrical characteristics (ta=25 ) parameter symbol min. typ max. unit conditions v i(off) 0.5 v cc =5v ,i o =10 0 a input voltage v i(on) 3 v v o =0.3v ,i o =10ma output voltage v o(on) 0.3 v i o /i i =10ma/0.5ma input current i i 0.88 ma v i =5v output current i o(off) 0.5 a v cc =50v, v i =0 dc current gain g i 30 v o =5v,i o =5ma input resistance r 1 7 10 13 k ? resistance ratio r 2 /r 1 0.8 1 1.2 transition frequency f t 250 mhz v ce =10v ,i e =-5ma,f=100mhz note 1: 150mw per element must not be exceeded. sot-363 1. gnd 2. in 3. out 4.gnd 5.in 6.out r2 r1 r1 r2 r1 r1=10k ? r2=10k ? dtr1 dtr2 1 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
-0.1 -1 -10 -100 -0.1 -1 -10 -100 -0.0 -0.4 -0.8 -1.2 -1.6 -2.0 -0.01 -0.1 -1 -10 -0.1 -1 -10 -100 1 10 100 1000 0 25 50 75 100 125 150 0 50 100 150 200 -0 -4 -8 -12 -16 -20 0 2 4 6 8 10 12 -1 -10 -100 -10 -100 -1000 on characteristics t a =25 t a =100 v o =-0.3v -3 -0.3 -30 output current i o (ma) input voltage v i(on) (v) dta114e off characteristics t a =100 t a =25 -3 -0.3 -0.03 v cc =-5v output current i o (ma) input voltage v i(off) (v) -0.3 -3 -30 30 t a =25 t a =100 v o =-5v 300 3 -3 -0.3 -30 g i ?? i o output current i o (ma) dc current gain g i p d ?? t a power dissipation p d (mw) ambient temperature t a ( ) f=1mhz t a =25 c o ?? v r output capacitance c o (pf) reverse bias voltage v r (v) -300 -30 -30 -3 v o(on) ?? i o t a =25 t a =100 i o /i i =20 output voltage v o(on) (mv) output current i o (ma) 2 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification c,jan,2012
0.1 1 10 100 0.1 1 10 100 11 01 0 0 0.01 0.1 1 0481 21 62 0 0 2 4 6 8 10 0.1 1 10 100 1 10 100 1000 0 . 00 . 40 . 81 . 21 . 62 . 0 0.01 0.1 1 10 0 25 50 75 100 125 150 0 50 100 150 200 30 3 0.03 0.3 300 30 3 30 3 0.3 3 0.03 0.3 30 3 30 0.3 3 0.3 off characteristics on characteristics t a =25 100 v o =0.3v input voltage v i(on) (v) output current i o (ma) v o(on) ?? i o t a =100 25 i o /i i =20 output voltage v o(on) (v) output current i o (ma) f=1mhz t a =25 c o ?? v r output capacitance c o (pf) reverse bias voltage v r (v) g i ?? i o t a =100 25 v o =5v dc current gain g i output current i o (ma) t a =100 25 v cc =5v output current i o (ma) input voltage v i(off) (v) dtc114e p d ?? t a power dissipation p d (mw) ambient temperature t a ( ) 3 of 3 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification c,jan,2012
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